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absolute maximum ratings pre-irradiation parameter units i d @ v gs = 12v, t c = 25c continuous drain current 20 i d @ v gs = 12v, t c = 100c continuous drain current 12 i dm pulsed drain current 80 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current 20 a e ar repetitive avalanche energy 30 mj dv/dt peak diode recovery dv/dt 3.8 v/ns t j operating junction -55 to 150 t stg storage temperature range package mounting surface temperature 300 (for 5 sec) weight 3.3 (typical) g o c a radiation hardened power mosfet surface mount (smd-2) www.irf.com 1 smd-2 product summary part number radiation level r ds(on) i d irhna7460se 100k rads (si) 0.32 ? 20a features: single event effect (see) hardened ultra low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount light weight

irhna7460se 500v, n-channel rad hard ? hexfet ? technology international rectifiers radhard tm hexfet ? mosfet technology provides high performance power mosfetsfor space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc todc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. pd - 91399b downloaded from: http:///
irhna7460se pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 500 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.66 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.32 v gs = 12v, i d = 12a resistance 0.36 v gs = 12v, i d = 20a v gs(th) gate threshold voltage 2.5 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 6.0 s ( )v ds > 15v, i ds = 12a i dss zero gate voltage drain current 50 v ds = 400v ,v gs =0v 250 v ds = 400v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 220 v gs =12v, i d = 20a q gs gate-to-source charge 50 nc v ds = 250v q gd gate-to-drain (miller) charge 110 t d (on) turn-on delay time 35 v dd =250v, i d =20a, t r rise time 100 v gs =12v, r g = ? t d (off) turn-off delay time 100 t f fall time 100 l s + l d total inductance 4.0 c iss input capacitance 3500 v gs = 0v, v ds = 25v c oss output capacitance 730 p f f = 1.0mhz c rss reverse transfer capacitance 260 na ? nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 0.42 r thj-pcb junction-to-pc board 1.6 soldered to a 2 inch square clad pc board c/w measured from the center of drain pad to center of source pad source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 20 i sm pulse source current (body diode) 80 v sd diode forward voltage 1.8 v t j = 25c, i s = 20a, v gs = 0v t rr reverse recovery time 800 ns t j = 25c, i f = 20a, di/dt 100a/ s q rr reverse recovery charge 16 cv dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier website.

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www.irf.com 3 pre-irradiation irhna7460se table 1. electrical characteristics @ tj = 25c, post total dose irradiation international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. single event effect safe operating area

parameter 100k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 500 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 na v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v i dss zero gate voltage drain current 50 a v ds = 400v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) 0.32 ? v gs = 12v, i d = 12a r ds(on) static drain-to-source on-state resistance (smd-2) 0.32 ? v gs = 12v, i d = 12a v sd diode forward voltage 1.8 v v gs = 0v, i d = 20a 0 100 200 300 400 0 -5 -10 -15 -20 vgs vds cu br ni ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =-0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v cu 28 285 43 375 375 375 375 375 br 36.8 305 39 350 350 350 325 300 ni 26.6 265 42 - 375 - - - downloaded from: http:///
irhna7460se pre-irradiation 4 www.irf.com

0.01 0.1 1 10 100 0.1 1 10 10 0 20us pulse width t = 25 c j o top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 0.1 1 10 100 20us pulse width t = 150 c j o top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v v = 50v 20s pulse width ds 0.1 1 10 100 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j o t = 150 c j o -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 18a 20a downloaded from: http:///
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1 10 1 00 0 2000 4000 6000 8000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 18a v = 100v ds v = 250v ds v = 400v ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 2. 2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 10 100 1000 1000 0 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 20a downloaded from: http:///
irhna7460se pre-irradiation 6 www.irf.com $

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v gs 0 4 8 12 16 20 25 50 75 100 125 15 0 c i , drain current (amps) d t , case temperature (c) a 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
www.irf.com 7 pre-irradiation irhna7460se q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !

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t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 8a 11a 18a downloaded from: http:///
irhna7460se pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 400 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 2.5 mh peak i l = 20a, v gs = 12v i sd 20a, di/dt 120a/ s, v dd 500v, t j 150c footnotes: case outline and dimensions smd-2 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/2006 downloaded from: http:///

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